Analytical model for dc characteristics and small-signal parameters of AIGaN/GaN modulation-doped field-effect transistor for microwave circuit applications

2000 ◽  
Vol 27 (6) ◽  
pp. 413-419 ◽  
Author(s):  
Rashmi ◽  
Angu Agrawal ◽  
S. Sen ◽  
S. Haldar ◽  
R. S. Gupta
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Circuit ◽  
Small Signal ◽  
Dc Characteristics ◽  
Signal Parameters ◽  
Effect Transistor

Two dimensional analytical model for a reconfigurable field effect transistor

2018 ◽  
Vol 114 ◽  
pp. 62-74 ◽  
Author(s):  
R. Ranjith ◽  
Remya Jayachandran ◽  
K.J. Suja ◽  
Rama S. Komaragiri
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor

Quantum Modelling of Nanoscale Silicon Gate-All-Around Field Effect Transistor

2020 ◽  
Vol 64 ◽  
pp. 115-122
Author(s):  
P. Vimala ◽  
N.R. Nithin Kumar
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
Quantum Mechanical Effects ◽  
Novel Devices

The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum mechanical effects. The classical oxide capacitance is replaced by the capacitance incorporating quantum effects by including the centroid parameter. The quantum variant of inversion charge distribution function, inversion layer capacitance, drain current, and transconductance expressions are modeled by employing this model. The established analytical model results agree with the simulated results, verifying these models' validity and providing theoretical supports for designing and applying these novel devices.

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